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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND MODULE
Document Type and Number:
WIPO Patent Application WO/2018/173497
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor device with which it is possible to improve the withstand voltage while minimizing the chip area. [Solution] Provided is a semiconductor device equipped with: a first terminal to which a high-frequency signal is fed; a second terminal from which the high-frequency signal is outputted; a first, a second, and a third switch element connected electrically in series between the first terminal and the second terminal; a first capacitor provided between the first terminal and a first node between the first switch element and the second switch element; and a second capacitor provided between the first terminal and a second node between the second switch element and the third switch element. The capacitance of the first capacitor is greater than the capacitance of the second capacitor.

Inventors:
NOGUCHI, Kenji (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
KOIMORI, Toshiyuki (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
NAGANO, Hiroaki (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
UEMURA, Masaya (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
NAKAYAMA, Megumi (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
Application Number:
JP2018/003252
Publication Date:
September 27, 2018
Filing Date:
January 31, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION (4-14-1, Asahi-cho Atsugi-sh, Kanagawa 14, 〒2430014, JP)
International Classes:
H03K17/687; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H03K17/10
Foreign References:
US20140312958A12014-10-23
JP2011249466A2011-12-08
JP2016171498A2016-09-23
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (HAZUKI INTERNATIONAL YOTSUYA, Daiichi Tomizawa Building 3-1-3, Yotsuya, Shinjuku-k, Tokyo 04, 〒1600004, JP)
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