Title:
SEMICONDUCTOR DEVICE AND OPTICAL DETECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/090277
Kind Code:
A1
Abstract:
[Problem] To reduce the reverse recovery time of a PN junction diode. [Solution] A semiconductor device comprising: a PN junction diode including an N-type first semiconductor region and a P-type second semiconductor region that are disposed in contact with each other at a PN junction plane; a third semiconductor region spaced apart from the first semiconductor region and the second semiconductor region, and that discharges the charge in a depletion layer disposed around the PN junction plane when a reverse biasing voltage is applied to the PN junction diode; a first electrode connected to the first semiconductor region; a second electrode connected to the second semiconductor region; and a third electrode connected to the third semiconductor region.
Inventors:
OHRI HIROYUKI (JP)
HATTORI HIROYUKI (JP)
HATTORI HIROYUKI (JP)
Application Number:
PCT/JP2022/042166
Publication Date:
May 25, 2023
Filing Date:
November 14, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L29/861; H01L27/146; H01L29/868; H01L31/10
Foreign References:
| JP2000299477A | 2000-10-24 | |||
| JPS4989482A | 1974-08-27 |
Attorney, Agent or Firm:
MIYAJIMA Manabu (JP)
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