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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/224840
Kind Code:
A1
Abstract:
Provided is a highly reliable semiconductor device having both low conduction loss and switching loss and having good uniformity in heat generation temperature during operation. The present invention is characterized in that: a high conduction region and a low conduction region are provided in the same semiconductor chip; the low conduction region has a first carrier control gate connected to a first gate electrode, and a switching gate connected to a second gate electrode that can be controlled independent of the first gate electrode; the high conduction region has a second carrier control gate connected to a third gate electrode; the first carrier control gate, from among the first carrier control gate and the switching gate, is disposed at the end, of the low conduction region, on the side of the boundary with the high conduction region; and the carrier concentration that can be accumulated during conduction is lower in the lower conduction region than in the high conduction region.

Inventors:
MIYOSHI TOMOYUKI (JP)
SAITO KATSUAKI (JP)
FURUKAWA TOMOYASU (JP)
Application Number:
PCT/JP2022/017318
Publication Date:
October 27, 2022
Filing Date:
April 08, 2022
Export Citation:
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Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L21/8234; H01L21/336; H01L27/06; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
WO2016038695A12016-03-17
WO2017029748A12017-02-23
WO2011074075A12011-06-23
Foreign References:
JP2019145758A2019-08-29
JP2012238715A2012-12-06
JP2018085449A2018-05-31
JPH1050724A1998-02-20
JP2016162807A2016-09-05
JP2007103770A2007-04-19
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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