Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/166523
Kind Code:
A1
Abstract:
If, in order to suppress generated noise, the switching speed is controlled to become slower by increasing the values of resistance for adjusting the switching speed and the capacitance of a capacitor, a problem that a highly-reliable power conversion device cannot be achieved since the switching control of a cascode hybrid power device cannot be performed well and the destruction of an element cannot be prevented arises.
A semiconductor device comprises a cascode JFET formed by connecting a source of a normally-on type wide bandgap semiconductor JFET and a drain of a normally-off type MOSFET, and connecting a gate of the wide bandgap semiconductor JFET and a source of the MOSFET, and is configured to be provided with a first resistor provided between the gate of the wide bandgap semiconductor JFET and the source of the MOSFET, and a constant voltage diode connected in parallel to the first resistor.
Inventors:
IBORI SATOSHI (JP)
SASAKI YASUSHI (JP)
TOMIYAMA KIYOTAKA (JP)
SASAKI YASUSHI (JP)
TOMIYAMA KIYOTAKA (JP)
Application Number:
PCT/JP2014/061811
Publication Date:
November 05, 2015
Filing Date:
April 28, 2014
Export Citation:
Assignee:
HITACHI IND EQUIPMENT SYS (JP)
International Classes:
H03K17/16; H03K17/687
Domestic Patent References:
| WO2011089837A1 | 2011-07-28 |
Foreign References:
| JP2011029386A | 2011-02-10 | |||
| JP2011166673A | 2011-08-25 | |||
| JP2011049741A | 2011-03-10 | |||
| JP2006324839A | 2006-11-30 | |||
| JP2013042270A | 2013-02-28 |
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
Manabu Inoue (JP)
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