Title:
SEMICONDUCTOR DEVICE, PREPARATION METHOD AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/045864
Kind Code:
A1
Abstract:
Provided in the present application are a semiconductor device, a preparation method and an electronic device. The method comprises: forming, on a substrate, a plurality of stacked structures, which are arranged spaced apart from each other, wherein each stacked structure comprises a sacrificial layer and a channel layer, which are stacked in turn; forming, in the substrate, an isolation structure between two adjacent stacked structures; forming a dummy gate structure stretching across the stacked structures; sequentially forming a gate side wall, a source/drain region and an interlayer insulation layer on two sides of the dummy gate structure; removing the dummy gate structure to form gate openings; etching sacrificial layers inwardly from exposed surfaces of the sacrificial layers located in the gate openings, such that channel regions of channel layers partially protrude from the sacrificial layers; covering, with protection layers, exposed surfaces of the channel regions located in the gate openings; removing the sacrificial layers located in the gate openings; removing the protection layers, such that all the channel regions are exposed; and forming, in the gate openings, gate structures surrounding the channel regions. A channel region having a relatively intact contour and interface is formed by means of providing a protection layer.
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Inventors:
ZHANG QIFEI (CN)
HUANG JINGYONG (CN)
LI YANGYANG (CN)
HUANG JINGYONG (CN)
LI YANGYANG (CN)
Application Number:
PCT/CN2023/104275
Publication Date:
March 07, 2024
Filing Date:
June 29, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/336; H01L21/8234; H01L29/78
Foreign References:
| CN113809010A | 2021-12-17 | |||
| CN110277316A | 2019-09-24 | |||
| CN111223778A | 2020-06-02 | |||
| CN113838803A | 2021-12-24 | |||
| US20200266060A1 | 2020-08-20 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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