Title:
SEMICONDUCTOR DEVICE, PREPARATION METHOD, POWER CONVERSION CIRCUIT AND VEHICLE
Document Type and Number:
WIPO Patent Application WO/2024/060260
Kind Code:
A1
Abstract:
Disclosed in the present application are a semiconductor device, a preparation method, a power conversion circuit and a vehicle. The semiconductor device comprises: an N-type semiconductor substrate, a first epitaxial layer, a plurality of gate trenches which are spaced apart from each other, a gate, an interlayer dielectric layer, a source and a drain. The first epitaxial layer comprises a plurality of first P-type semiconductor regions, said first P-type semiconductor regions being arranged below the gate trenches; the gate trenches are arranged in the first epitaxial layer; the gate comprises first gates and second gates which are in contact with each other, the first gates filling the gate trenches and thus being separated by gate dielectric layers, and the second gates being arranged at the top of the first epitaxial layer; the interlayer dielectric layer covers the side of the gate away from the semiconductor substrate and is provided with contact holes extending in a second direction; the source is arranged on the side of the interlayer dielectric layer away from the semiconductor substrate, and makes contact with the first epitaxial layer by means of the contact holes; the drain is arranged on the side of the semiconductor substrate away from the first epitaxial layer. The total on-resistance of the device is reduced, and the robustness of the device is improved.
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Inventors:
HAMADA KIMIMORI (CN)
HU FEI (CN)
HU FEI (CN)
Application Number:
PCT/CN2022/121113
Publication Date:
March 28, 2024
Filing Date:
September 23, 2022
Export Citation:
Assignee:
HUAWEI DIGITAL POWER TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/336
Domestic Patent References:
| WO2000054342A1 | 2000-09-14 |
Foreign References:
| CN111370487A | 2020-07-03 | |||
| CN111370463A | 2020-07-03 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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