Title:
SEMICONDUCTOR DEVICE, PREPARATION METHOD THEREFOR AND ELECTRICAL EQUIPMENT THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/082209
Kind Code:
A1
Abstract:
Disclosed are a semiconductor device, a preparation method therefor and electrical equipment thereof. The semiconductor device comprises a silicon substrate, a bootstrap electrode, and an insulating layer. An emitter electrode, a gate electrode, and a collector electrode are formed on the silicon substrate. The bootstrap electrode is formed on the silicon substrate. The insulating layer is formed on the silicon substrate and is located between the emitter electrode and the bootstrap electrode, so that a bootstrap capacitor is formed between the emitter electrode and the bootstrap electrode. The semiconductor device of the present application is integrated with a bootstrap capacitor, and there is no need to additionally connect the bootstrap capacitor in the circuit, thereby simplifying the circuit structure.
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Inventors:
LAN HAO (CN)
FENG YUXIANG (CN)
FENG YUXIANG (CN)
Application Number:
PCT/CN2019/125342
Publication Date:
May 06, 2021
Filing Date:
December 13, 2019
Export Citation:
Assignee:
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENTER CO LTD (CN)
MIDEA GROUP CO LTD (CN)
MIDEA GROUP CO LTD (CN)
International Classes:
H01L29/732; H01L21/331; H01L29/06; H01L29/40
Foreign References:
| CN103872037A | 2014-06-18 | |||
| CN107910326A | 2018-04-13 | |||
| CN105074922A | 2015-11-18 | |||
| JP2005191835A | 2005-07-14 | |||
| CN201911054305A | 2019-10-31 |
Other References:
See also references of EP 4030488A4
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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