Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/016370
Kind Code:
A1
Abstract:
The present application relates to the technical field of electronic devices, and in particular, to a semiconductor device and a preparation method therefor. The semiconductor device comprises: a substrate; an epitaxial structure provided on the substrate; a passivation layer provided on the epitaxial structure; and an ohmic contact electrode arranged in parallel with the passivation layer on the epitaxial structure, wherein the ohmic contact electrode comprises a non-contact layer and a contact layer arranged in a stacked manner, the contact layer is in contact with the epitaxial structure, and constituent elements of the contact layer comprise a tantalum element and a germanium element. The semiconductor device has a lower ohmic contact resistance.
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Inventors:
WANG XIN (CN)
ZHANG DONGLIANG (CN)
WANG DONGSHENG (CN)
ZHANG DONGLIANG (CN)
WANG DONGSHENG (CN)
Application Number:
PCT/CN2022/110564
Publication Date:
February 16, 2023
Filing Date:
August 05, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/285; H01L29/45; H01L21/335; H01L29/778
Foreign References:
| JP2006059933A | 2006-03-02 | |||
| CN111403281A | 2020-07-10 | |||
| US4186410A | 1980-01-29 | |||
| CN202110913394A | 2021-08-10 |
Other References:
EROFEEV E.V.; KAGADEI V.A.; KAZIMIROV A.I.; FEDIN I.V.: "Ohmic contacts to n+-GaAs with refractory metal sidewall diffusion barrier", 2015 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), IEEE, 21 May 2015 (2015-05-21), pages 1 - 5, XP033166777, DOI: 10.1109/SIBCON.2015.7147054
Attorney, Agent or Firm:
E-TONE INTELLECTUAL PROPERTY FIRM (GENERAL PARTNERSHIP) (CN)
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