Title:
SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME
Document Type and Number:
WIPO Patent Application WO/2005/109508
Kind Code:
A1
Abstract:
A lower electrode film, a ferroelectric film (10) and an upper electrode film are formed on a semiconductor substrate. Subsequently, the upper electrode film is patterned to form an upper electrode (11a) and a dummy electrode (11b). Total area of the upper electrode (11a) and the dummy electrode (11b) is set at 5% or above of the area of the semiconductor substrate. Subsequently, the upper electrode (11a) is connected with a transistor or wiring but the dummy electrode (11b) is not connected with another element or the like.
Inventors:
SUEZAWA KENKICHI (JP)
OKITA YOICHI (JP)
SAIGOH KAORU (JP)
OKITA YOICHI (JP)
SAIGOH KAORU (JP)
Application Number:
PCT/JP2004/006115
Publication Date:
November 17, 2005
Filing Date:
April 28, 2004
Export Citation:
Assignee:
FUJITSU LTD (JP)
SUEZAWA KENKICHI (JP)
OKITA YOICHI (JP)
SAIGOH KAORU (JP)
SUEZAWA KENKICHI (JP)
OKITA YOICHI (JP)
SAIGOH KAORU (JP)
International Classes:
H01L21/02; H01L21/8239; H01L21/8246; H01L27/105; H01L27/115; (IPC1-7): H01L27/105; H01L21/8239
Foreign References:
| JPH11354727A | 1999-12-24 | |||
| JP2004087978A | 2004-03-18 | |||
| JP2003100912A | 2003-04-04 |
Attorney, Agent or Firm:
Kokubun, Takayoshi (17-8 Higashi-Ikebukuro 1-chome, Toshima-k, Tokyo 13, JP)
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