Title:
SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2007/018299
Kind Code:
A1
Abstract:
A semiconductor device comprising silicon single-crystal substrate (101),
silicon carbide layer (102) superimposed on a surface of the substrate, Group
III nitride semiconductor junction layer (103) disposed in contact with the
silicon carbide layer and superlattice structure layer (104) constituted of
a Group III nitride semiconductor and superimposed on the Group III nitride semiconductor
junction layer, wherein the silicon carbide layer is a layer of cubical crystal
with a greater than 0.436 nm but not greater than 0.460 nm lattice constant, the
layer being one of nonstoichiometrical composition enriched with silicon,
and wherein the Group III nitride semiconductor junction layer has a composition
of the formula AlXGaYInZN1-αMα
(0 ≤ X,Y,Z ≤ 1, X+Y+Z=1, 0 ≤ α < 1 and M is any of
Group V elements other than nitrogen).
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Inventors:
OHACHI TADASHI (JP)
UDAGAWA TAKASHI (JP)
UDAGAWA TAKASHI (JP)
Application Number:
PCT/JP2006/315978
Publication Date:
February 15, 2007
Filing Date:
August 07, 2006
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
DOSHISHA (JP)
OHACHI TADASHI (JP)
UDAGAWA TAKASHI (JP)
DOSHISHA (JP)
OHACHI TADASHI (JP)
UDAGAWA TAKASHI (JP)
International Classes:
H01L21/203; H01L29/06; H01L29/15; H01L33/06; H01L33/16; H01L33/32; H01L33/34
Foreign References:
| JPH04223330A | 1992-08-13 | |||
| JPH0856015A | 1996-02-27 | |||
| JP2000068594A | 2000-03-03 | |||
| JPH11330622A | 1999-11-30 | |||
| JPH07172997A | 1995-07-11 | |||
| JPH0982643A | 1997-03-28 | |||
| JPH08236445A | 1996-09-13 | |||
| JP2001102632A | 2001-04-13 | |||
| JPH09275226A | 1997-10-21 |
Other References:
KIKUCHI T. ET AL.: "3C-SiC/Si template growth and atomic layer epitaxy of cubic GaN by RF-MBE", JOURNAL OF CRYSTAL GROWTH, vol. 275, 18 January 2005 (2005-01-18), pages E1215 - E1221, XP004823416
WANG D. ET AL.: "Heteroepitaxial growth of cubic GaN on Si(001) coated with thin flat SiC by plasma-assisted molecular-beam epitaxy", APPLIED PHYSICS LETTERS, vol. 76, no. 13, 2000, pages 1683 - 1685, XP003008085
WANG D. ET AL.: "Heteroepitaxial growth of cubic GaN on Si(001) coated with thin flat SiC by plasma-assisted molecular-beam epitaxy", APPLIED PHYSICS LETTERS, vol. 76, no. 13, 2000, pages 1683 - 1685, XP003008085
Attorney, Agent or Firm:
FUKUDA, Kenzo et al. (6-13 Nishishinbashi 1-chom, Minato-ku Tokyo 03, JP)
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