SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE

WIPO Patent Application WO/2010/067525

A1

A semiconductor device equipped with: a 3-5 Group element compound semiconductor having a zincblende crystal structure; a dielectric material which is in contact with the (111) plane of the 3-5 Group element compound semiconductor, or with a plane thereof equivalent to the (111) plane, or with a plane thereof forming an off angle with either the (111) plane or the plane equivalent to the (111) plane; and an MIS type electrode which is in contact with the dielectric material and contains a metallic conductive material.

HATA MASAHIKO (JP)
FUKUHARA NOBORU (JP)
YAMADA HISASHI (JP)
TAKAGI SHINICHI (JP)
SUGIYAMA MASAKAZU (JP)
TAKENAKA MITSURU (JP)
YASUDA TETSUJI (JP)
MIYATA NORIYUKI (JP)
ITATANI TARO (JP)
ISHII HIROYUKI (JP)
OHTAKE AKIHIRO (JP)
NARA JUN (JP)

PCT/JP2009/006426

June 17, 2010

November 27, 2009

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SUMITOMO CHEMICAL CO (JP)
UNIV TOKYO (JP)
NAT INST OF ADVANCED IND SCIEN (JP)
NAT INST FOR MATERIALS SCIENCE (JP)
HATA MASAHIKO (JP)
FUKUHARA NOBORU (JP)
YAMADA HISASHI (JP)
TAKAGI SHINICHI (JP)
SUGIYAMA MASAKAZU (JP)
TAKENAKA MITSURU (JP)
YASUDA TETSUJI (JP)
MIYATA NORIYUKI (JP)
ITATANI TARO (JP)
ISHII HIROYUKI (JP)
OHTAKE AKIHIRO (JP)
NARA JUN (JP)

H01L21/336; H01L21/28; H01L29/423; H01L29/49; H01L29/78; H01L29/786; H01L29/94

JPS58164269A	1983-09-29
JPS56157063A	1981-12-04
JPH06140332A	1994-05-20
JPH0482275A	1992-03-16
JPS6459859A	1989-03-07
JPH02119145A	1990-05-07
JPS59231865A	1984-12-26

RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)

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