SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2011/043183

A1

A thin film diode (100A) comprising a semiconductor layer (130) having first, second and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122), wherein the first semiconductor region (134A) contains a first-conductivity-type impurity at a first concentration, the second semiconductor region (135A) contains a second-conductivity-type impurity that is different from the first-conductivity-type impurity at a second concentration, the third semiconductor region (133A) contains the first-conductivity-type impurity at a third concentration that is lower than the first concentration or contains the second-conductivity-type impurity at a third concentration that is lower than the second concentration, and the first semiconductor region (134A) corresponds to the opening pattern of the second insulating layer (123) or the second semiconductor region (135A) corresponds to the opening pattern of the second insulating layer (123).

MATSUKIZONO HIROSHI
KIMURA TOMOHIRO
OGAWA HIROYUKI

PCT/JP2010/066287

April 14, 2011

September 21, 2010

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SHARP KK (JP)
MATSUKIZONO HIROSHI
KIMURA TOMOHIRO
OGAWA HIROYUKI

H01L27/146; G02F1/135; G02F1/1368; G09F9/30; H01L21/20; H01L21/336; H01L29/786; G02F1/1333

JP2006259241A	2006-09-28
JP2006060191A	2006-03-02
JPH1197703A	1999-04-09
JP2008304830A	2008-12-18
JPH05275449A	1993-10-22
JPH05335332A	1993-12-17
JP2003151994A	2003-05-23

OKUDA SEIJI (JP)
Seiji Okuda (JP)

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