SEMICONDUCTOR DEVICE PRODUCING METHOD - SUMITOMO HEAVY INDUSTRIES

Title:

SEMICONDUCTOR DEVICE PRODUCING METHOD

Document Type and Number:

WIPO Patent Application WO/2014/024589

Kind Code:

A1

Abstract:

A semiconductor substrate that has first and second surfaces is prepared, wherein a semiconductor element is formed on the first surface and an impurity is implanted in a surface part thereof on the second surface side. A first laser pulse that is emitted from a semiconductor laser oscillator and has a first pulse width is caused to be incident on the second surface. A second laser pulse having a second pulse width that is 1/10 or smaller than the first pulse width is caused to incident on the area where the first laser pulse is incident in a superimposed manner. The relative position relationship on the time axis between the falling time of the first laser pulse and the rising time of the first laser pulse is set so that the temperature of the first surface, which is caused to rise by the incidence of the first laser pulse and the second laser pulse, should not exceed a predetermined upper allowable limit value.

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Inventors:

WAKABAYASHI NAOKI (JP)

Application Number:

PCT/JP2013/067255

Publication Date:

February 13, 2014

Filing Date:

June 24, 2013

Export Citation:

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Assignee:

SUMITOMO HEAVY INDUSTRIES (JP)

International Classes:

H01L21/268; H01L21/265; H01L21/336; H01L29/739; H01L29/78

Domestic Patent References:

WO2011065094A1	2011-06-03
WO2007015388A1	2007-02-08

Foreign References:

JP2012044121A	2012-03-01
JP2005136218A	2005-05-26
JP2008244446A	2008-10-09
JP2007123300A	2007-05-17
JP2005223301A	2005-08-18
JP2010171057A	2010-08-05
JP2009032858A	2009-02-12

Other References: