Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD AND PRODUCTION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2015/137172
Kind Code:
A1
Abstract:
Provided is a method for producing a semiconductor device capable of exerting the desired capability. The method comprises subjecting the layered structure (43) of a wafer (W) to plasma etching in an etching module (11) of the semiconductor device production apparatus (10) to erode through etching the portion of the layered structure (43) that is not covered by a hard mask (44), transferring into a trimming module (12) the wafer (W) having a pillar structure (49) whereof the side surfaces have become slanted due to the plasma etching being performed, supplying an acetic acid gas into a processing chamber (22) of the trimming module (12), and emitting an oxygen GCIB from a GCIB-emitting device (26) toward the pillar structure (49).
Inventors:
HARA KENICHI (JP)
Application Number:
PCT/JP2015/056011
Publication Date:
September 17, 2015
Filing Date:
February 23, 2015
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L43/12; H01L21/302; H01L21/3065; H01L21/8246; H01L27/105; H01L43/08
Foreign References:
| JP2012199431A | 2012-10-18 | |||
| JP2013021129A | 2013-01-31 | |||
| JP2006253303A | 2006-09-21 |
Other References:
AKIRA YAMAGUCHI ET AL.: "Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch- Resistant material", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 52, no. 5S2, 20 May 2013 (2013-05-20), pages 1 - 4, XP055223484, ISSN: 0021-4922, Retrieved from the Internet [retrieved on 20150508]
Attorney, Agent or Firm:
BECCHAKU, Shigehisa et al. (JP)
Role of another Shigehisa (JP)
Role of another Shigehisa (JP)
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