Title:
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/176434
Kind Code:
A1
Abstract:
This semiconductor device comprises: a semiconductor layer; an inter-layer insulation film having a through-hole provided so as to face the semiconductor layer and a low-permittivity region provided in at least a portion of the periphery of the through-hole; a gate electrode including an embedded section which is embedded in the through-hole of the inter-layer insulation film and a widened section which faces the semiconductor layer across the inter-layer insulation film and is widened to the periphery of the embedded section; and a gate insulation film provided between the semiconductor layer and the embedded section of the gate electrode.
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Inventors:
TAKEUCHI KATSUHIKO (JP)
Application Number:
PCT/JP2019/005228
Publication Date:
September 19, 2019
Filing Date:
February 14, 2019
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/338; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Domestic Patent References:
| WO2006080109A1 | 2006-08-03 |
Foreign References:
| JP2012104760A | 2012-05-31 | |||
| JP2012178458A | 2012-09-13 | |||
| JP2002184786A | 2002-06-28 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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