Title:
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2014/132616
Kind Code:
A1
Abstract:
A semiconductor device comprising a bipolar transistor using a polysilicon film for an emitter electrode. This bipolar transistor has: a collector area formed on a Si substrate (1); a base layer (30) formed upon the collector area; an emitter area (39) formed in an upper site of the base layer (30), separated from the collector area; and a silicon oxide film (41) formed upon the base layer (30) and covering a joining section between the base layer (30) and the emitter area (39). The concentration of a fluorine element present in the joining section, at the interface with the silicon oxide film (41), is at least 1×1020cm-3.
Inventors:
SAKAMOTO TOSHIRO (JP)
Application Number:
PCT/JP2014/000960
Publication Date:
September 04, 2014
Filing Date:
February 24, 2014
Export Citation:
Assignee:
ASAHI KASEI MICRODEVICES CORP (JP)
International Classes:
H01L21/331; H01L21/28; H01L29/417; H01L29/737
Foreign References:
| JPH04250632A | 1992-09-07 | |||
| JP2004311971A | 2004-11-04 | |||
| JPH01243582A | 1989-09-28 | |||
| JPH10189470A | 1998-07-21 |
Attorney, Agent or Firm:
MORI, Tetsuya et al. (JP)
Woods Tetsuya (JP)
Woods Tetsuya (JP)
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