Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD, SUBSTRATE TREATMENT DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2020/016915
Kind Code:
A1
Abstract:
In the present invention, a thin film is selectively formed on a substrate, while damage to a film upon which the thin film is not formed is inhibited. The following steps are implemented in order: a step in which a first inorganic material is supplied to a substrate, on a surface of which at least a first film and a second film differing from the first film are exposed, to remove a natural oxide film from the surface of the substrate; a step in which an oxidizing agent is supplied to the substrate to oxidize the first film and reform an oxide film on the surface of the first film; a step in which a second inorganic material is supplied to the substrate to modify the surface of the first film; and a step in which a deposition gas is supplied to the substrate to selectively grow a thin film on the surface of the second film.
Inventors:
ASHIHARA HIROSHI (JP)
DEGAI MOTOMU (JP)
WASEDA TAKAYUKI (JP)
DEGAI MOTOMU (JP)
WASEDA TAKAYUKI (JP)
Application Number:
PCT/JP2018/026673
Publication Date:
January 23, 2020
Filing Date:
July 17, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/318; C23C16/34; H01L21/302; H01L21/31
Foreign References:
| JPH06151309A | 1994-05-31 | |||
| JP2008522437A | 2008-06-26 | |||
| JP2010171101A | 2010-08-05 | |||
| JP2018022716A | 2018-02-08 | |||
| JP2017222928A | 2017-12-21 | |||
| US5670431A | 1997-09-23 | |||
| JPH08107144A | 1996-04-23 |
Attorney, Agent or Firm:
PATENT PROFESSIONAL CORPORATION IPWIN (JP)
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