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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/064775
Kind Code:
A1
Abstract:
The objective of the present invention is to provide a technique that ensures conduction between a gate terminal of a semiconductor switching element and a wiring layer in a semiconductor device formed with a wiring layer inside a ceramic layer. This semiconductor device comprises: a wiring layer that is inside a ceramic layer formed above an insulation layer; and a metal layer for connecting terminals from the semiconductor switching element other than the gate terminal. The wiring layer and the gate terminal from the semiconductor switching element are connected electrically via a connection part formed from a conductive material. The connection part protrudes more than the metal layer toward the semiconductor switching element (see FIG. 1).

Inventors:
TANIE Hisashi (6-6, Marunouchi 1-chome, Chiyoda-k, Tokyo 80, 〒1008280, JP)
SHIMAZU Hiromi (6-6, Marunouchi 1-chome, Chiyoda-k, Tokyo 80, 〒1008280, JP)
ITO Hiroyuki (2-70, Konan 1-chome, Minato-k, Tokyo 24, 〒1088224, JP)
Application Number:
JP2018/025007
Publication Date:
April 04, 2019
Filing Date:
July 02, 2018
Export Citation:
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Assignee:
HITACHI METALS, LTD. (2-70, Konan 1-chome Minato-k, Tokyo 24, 〒1088224, JP)
International Classes:
H01L25/07; H01L23/12; H01L23/36; H01L25/18
Foreign References:
JP2005347440A2005-12-15
Attorney, Agent or Firm:
HIRAKI & ASSOCIATES (Atago Green Hills MORI Tower 32F, 5-1 Atago 2-chome, Minato-k, Tokyo 32, 〒1056232, JP)
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