Title:
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/150526
Kind Code:
A1
Abstract:
This invention comprises: a source electrode 13 formed on the surface of a semiconductor substrate 11 and joined to the semiconductor substrate 11 at both a source electrode 13a of a first contact region, which is in a region for ohmic contact, and a source electrode 13b of a second contact region, which is in a region for non-ohmic contacts and the like; a back surface electrode 16 formed on the back surface of the semiconductor substrate 11; and a through-hole 17 provided with wiring connecting the back surface electrode 16 to the source electrode 13b of the second contact region of the source electrode 13. In this manner, the invention can not only improve resistance to corrosion but can also reduce current leakage, yielding a highly reliable semiconductor device suitable for high-frequency operations.
Inventors:
TSUNAMI DAISUKE (JP)
Application Number:
PCT/JP2018/003419
Publication Date:
August 08, 2019
Filing Date:
February 01, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2015080107A1 | 2015-06-04 |
Foreign References:
| JP2007242853A | 2007-09-20 | |||
| JP2009164158A | 2009-07-23 | |||
| JP2011003652A | 2011-01-06 | |||
| JP2014110311A | 2014-06-12 | |||
| JP2007157829A | 2007-06-21 | |||
| JP2015065233A | 2015-04-09 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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