Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2018/220741
Kind Code:
A1
Abstract:
Provided is a technique for obtaining sufficiently large drain current in a field effect type transistor using a nitride semiconductor. The invention involves: forming on the upper surface of a semiconductor substrate 1, a channel layer 3, which is Alx1Iny1Ga1-x1-y1N; forming on the upper surface of the channel layer 3, a barrier layer 4, which is Alx2Iny2Ga1-x2-y2N, having a larger band gap than the band gap of the channel layer 3; forming on at least a portion of the upper surface of the barrier layer 4, a gate insulation film 9, which is an insulator or a semiconductor, having a larger band gap than that of the barrier layer 4; forming on the upper surface of the gate insulation film 9, a gate electrode 10; and performing heat processing while applying a positive voltage to the gate electrode 10.
Inventors:
NANJO TAKUMA (JP)
HAYASHIDA TETSURO (JP)
YOSHITSUGU KOJI (JP)
FURUKAWA AKIHIKO (JP)
HAYASHIDA TETSURO (JP)
YOSHITSUGU KOJI (JP)
FURUKAWA AKIHIKO (JP)
Application Number:
PCT/JP2017/020240
Publication Date:
December 06, 2018
Filing Date:
May 31, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| WO2016157371A1 | 2016-10-06 |
Foreign References:
| JPH118255A | 1999-01-12 | |||
| JP2010225938A | 2010-10-07 | |||
| US20130001646A1 | 2013-01-03 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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