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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/077866
Kind Code:
A1
Abstract:
In this invention, damage to the interior of a device is suppressed and wiring members are joined to one another appropriately. The invention comprises overlapping first and second wiring members (1a, 2a), then, disposing a protective member (3) in an opposite region (7), which faces away from an irradiation region (6) of the overlapped first and second wiring members (1a, 2a) wherein a laser light (4) is irradiated. The protective member (3) has a higher melting point than that of the first and/or second wiring members (1a, 2a) constituting the opposite region (7). A laser light (4) is irradiated onto the irradiation region (6). In so doing, since the protective member (3) has a higher melting point than that of the first and/or second wiring members (1a, 2a) constituting the opposite region (7), the protective member (3) is not melted by the laser light (4). Therefore, the laser light (4) does not penetrate the protective member (3); in addition, scattering and dropping of molten pieces from a molten second wiring member (2a) are prevented.

Inventors:
OKUMOTO RYOJI (JP)
Application Number:
PCT/JP2018/030786
Publication Date:
April 25, 2019
Filing Date:
August 21, 2018
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/60; B23K26/18; B23K26/21; H01L23/48
Foreign References:
JP2007227893A2007-09-06
JP2010082673A2010-04-15
JP2010075967A2010-04-08
Attorney, Agent or Firm:
HATTORI, Kiyoshi (JP)
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