Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/163145
Kind Code:
A1
Abstract:
This semiconductor device production method comprises: an assembled body forming step of disposing, between an electrode 24 and an electrode connection piece 32, a soldering material 44 having a structure including, layered therein, a first soldering material layer 41 containing a flux and disposed on the surface of the electrode 24, a second soldering material layer 42 containing a flux and disposed on the surface of the electrode connection piece 32, and a third soldering material layer 43 containing no flux and disposed between the first soldering material layer 41 and the second soldering material layer 42, to form an assembled body 50 wherein the substrate 10, the semiconductor chip 20, and the lead 30 are disposed in such a manner that the electrode 24 and the electrode connection piece 32 face one another across the soldering material 44; and a joining step of joining the electrode 24 to the electrode connection piece 32 via a solder 40. This semiconductor device production method can produce a semiconductor device whereof the reliability does not readily decline and can prevent the joining step from becoming complex.
Inventors:
NAKAGAWA MASAO (JP)
KUWANO RYOJI (JP)
SHINOTAKE YOHEI (JP)
NISHIMURA HIDEKI (JP)
KUWANO RYOJI (JP)
SHINOTAKE YOHEI (JP)
NISHIMURA HIDEKI (JP)
Application Number:
PCT/JP2018/007062
Publication Date:
August 29, 2019
Filing Date:
February 26, 2018
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L21/60; B23K1/00; H01L21/52; H01L23/48; H01L29/78
Foreign References:
| JP2013183038A | 2013-09-12 | |||
| JPH113952A | 1999-01-06 | |||
| JPH067990A | 1994-01-18 | |||
| JP2008311273A | 2008-12-25 | |||
| JP2012049182A | 2012-03-08 |
Attorney, Agent or Firm:
MATSUO, Nobutaka (JP)
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