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Title:
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/186315
Kind Code:
A1
Abstract:
In order to provide a semiconductor device having both good electrical characteristics and stable electrical characteristics, this semiconductor device has: a semiconductor layer including a metal oxide; a first insulating layer; a second insulating layer; a third insulating layer including a nitride; and a first conductive layer. The first insulating layer overlaps the semiconductor layer and has: a convex first region; and a second region that does not overlap the semiconductor layer and is thinner than the first region. The second insulating layer is provided covering an upper surface of the second region, a side surface of the first region, and the semiconductor layer. The first conductive layer is provided upon the second insulating layer and the lower surface thereof upon the second region has a section positioned lower than the lower surface of the semiconductor layer. The semiconductor layer has: a third region that overlaps the second insulating layer and the first conductive layer; and a fourth region that does not overlap the first conductive layer or the second insulating layer. The third insulating layer is provided abutting the fourth region of the semiconductor layer.

Inventors:
YAMAZAKI, Shunpei (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
OKAZAKI, Kenichi (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
JINTYOU, Masami
IGUCHI, Takahiro
SHIMA, Yukinori
Application Number:
IB2019/052105
Publication Date:
October 03, 2019
Filing Date:
March 15, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (398 Hase, Atsugi-shi Kanagawa, 36, 〒2430036, JP)
International Classes:
H01L21/336; H01L29/786; H01L51/50
Domestic Patent References:
WO2017085591A12017-05-26
Foreign References:
JP2015216369A2015-12-03
JP2017112374A2017-06-22
JP2016074580A2016-05-12
JP2018006734A2018-01-11
US20080254613A12008-10-16
US20150205194A12015-07-23
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