Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/250083
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device having little variation in transistor characteristics. The present invention has a semiconductor film, a pair of shielding films upon the semiconductor film, and an insulating film positioned upon the semiconductor film and provided between the pair of shielding films. The semiconductor film has a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions are superimposed on the shielding films and the i-type region is superimposed on the insulating film.
Inventors:
YAMAZAKI SHUNPEI (JP)
SAWAI HIROMI (JP)
KOMAGATA HIROKI (JP)
JINBO YASUHIRO (JP)
OKUNO NAOKI (JP)
KOMATSU YOSHIHIRO (JP)
ANDO MOTOHARU
MORIWAKA TOMOAKI (JP)
MORIYA KOJI (JP)
ISHIKAWA JUN (JP)
SAWAI HIROMI (JP)
KOMAGATA HIROKI (JP)
JINBO YASUHIRO (JP)
OKUNO NAOKI (JP)
KOMATSU YOSHIHIRO (JP)
ANDO MOTOHARU
MORIWAKA TOMOAKI (JP)
MORIYA KOJI (JP)
ISHIKAWA JUN (JP)
Application Number:
PCT/IB2020/055190
Publication Date:
December 17, 2020
Filing Date:
June 02, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/268; H01L21/28; H01L21/336; H01L21/428; H01L21/477; H01L21/768; H01L21/822; H01L21/8234; H01L21/8239; H01L21/8242; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L27/105; H01L27/108; H01L27/1156; H01L29/417; H01L29/788; H01L29/792
Foreign References:
| JP2017120412A | 2017-07-06 | |||
| JP2018098519A | 2018-06-21 | |||
| JP2011139054A | 2011-07-14 | |||
| JP2018137475A | 2018-08-30 | |||
| JP2019091872A | 2019-06-13 |
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