Title:
SEMICONDUCTOR DEVICE PROVIDED WITH OXIDE SEMICONDUCTOR TFT
Document Type and Number:
WIPO Patent Application WO/2018/123660
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising a substrate (21) and an oxide semiconductor TFT (20) supported by the substrate, said oxide semiconductor TFT (20) comprising: an oxide semiconductor layer (27) that includes In, Ga, and Zn; a gate electrode (23); a gate insulating layer (25) that is formed between the gate electrode (23) and the oxide semiconductor layer (27); and a source electrode (28) and a drain electrode (29) that contact with the oxide semiconductor layer (27), wherein the oxide semiconductor layer (27) has a laminated structure including a first layer (31), a second layer (32), and an intermediate transition layer (33) that is disposed between the first layer and the second layer, the first layer (31) is located on the side closer to the gate insulating layer than the second layer (32), the first layer (31) has a composition different from that of the second layer (32), and the intermediate transition layer (33) has a composition continuously varying from the first layer side towards the second layer side.
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Inventors:
NAKAJIMA SHINJI
NISHIKI HIROHIKO
TAKEDA YUJIRO
MURASHIGE SHOGO
NISHIKI HIROHIKO
TAKEDA YUJIRO
MURASHIGE SHOGO
Application Number:
PCT/JP2017/045127
Publication Date:
July 05, 2018
Filing Date:
December 15, 2017
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; H01L21/205
Foreign References:
| JP2015079947A | 2015-04-23 | |||
| JP2013041945A | 2013-02-28 | |||
| JP2014007399A | 2014-01-16 |
Attorney, Agent or Firm:
OKUDA Seiji (JP)
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