Title:
SEMICONDUCTOR DEVICE, SINTERED METAL SHEET, AND METHOD OF MANUFACTURING SINTERED METAL SHEET
Document Type and Number:
WIPO Patent Application WO/2020/026516
Kind Code:
A1
Abstract:
The purpose of the present invention is to reduce risks such as occurrence of exfoliation, development of cracks, and damage to a semiconductor element in a sintered metal layer that bonds a semiconductor element to a support substrate. To this end, provided is a semiconductor device (100) in which a semiconductor element (1) is bonded to the top of a support substrate (10) via a sintered metal layer (2), wherein the sintered metal layer (2) has a low porosity region (3) formed in a region more inward than an outer edge of the bonded semiconductor element (1), the low porosity region (3) having a porosity lower than the other regions. This low porosity region (3), for example, has a long strap-like planar shape, is formed as a wall-like structure that penetrates the sintered metal layer 2 from the top surface to the bottom surface, and is formed so as to surround the region immediately below a center portion of the semiconductor element (1) along the outer edge of the semiconductor element (1).
Inventors:
SUZUKI TOMOHISA (JP)
MORIYA HIROSHI (JP)
MORIYA HIROSHI (JP)
Application Number:
PCT/JP2019/011935
Publication Date:
February 06, 2020
Filing Date:
March 20, 2019
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L21/52; B22F3/105
Domestic Patent References:
| WO2014155619A1 | 2014-10-02 |
Foreign References:
| JP2015185559A | 2015-10-22 | |||
| JP2015216160A | 2015-12-03 |
Attorney, Agent or Firm:
ISONO INTERNATIONAL PATENT OFFICE, P.C. (JP)
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