Title:
SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC INSTRUMENT
Document Type and Number:
WIPO Patent Application WO/2019/082689
Kind Code:
A1
Abstract:
The present disclosure pertains to a semiconductor device with which it is possible to further stabilize device characteristics, a solid-state imaging element, a manufacturing method, and an electronic instrument. The solid-state imaging element is provided with a pixel region that is a region of a semiconductor substrate in which pixels are formed, and a peripheral region that is a region of the semiconductor substrate in which no pixels are formed. A stopper layer is formed to a prescribed depth of the semiconductor substrate in the peripheral region, the stopper layer being formed from a different material than the semiconductor substrate, and a carved portion is formed to a depth that corresponds to the stopper layer by carving into the pixel region and the peripheral region of the semiconductor substrate. At such time, detection of a compound that includes the material of the stopper layer is used to determine an endpoint of a processing time for carving the carved portion. The present feature can be applied to, e.g., CMOS image sensors.
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Inventors:
MIURA TOSHIHIRO (JP)
Application Number:
PCT/JP2018/038060
Publication Date:
May 02, 2019
Filing Date:
October 12, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/146; H01L21/301; H01L21/3065; H04N5/374
Domestic Patent References:
| WO2011148973A1 | 2011-12-01 |
Foreign References:
| JPS63140537A | 1988-06-13 | |||
| JPH07273082A | 1995-10-20 | |||
| JP2015144197A | 2015-08-06 | |||
| JP2011066241A | 2011-03-31 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
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