Title:
SEMICONDUCTOR DEVICE AND STACKED-TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/102100
Kind Code:
A1
Abstract:
In a semiconductor device (1) according to the present invention, a solder resist (8) has a plurality of openings (8a-8f) that expose electrodes (5a-5f). Solder bumps (9a- 9f) are formed in the openings and each have a solder ball portion protruding from the corresponding opening. The height of the openings is set to increase with increasing gap distance between the electrodes of an interposer substrate (6) and board electrodes (10a- lOf) of a printed wiring board (11) on which the semiconductor device (1) is mounted. Thus, the solder bumps that correspond to sections where the gap distance is large can be increased in height, whereas the solder bumps that correspond to sections where the gap distance is small can be decreased in height, thereby avoiding the occurrence of defective joints caused by a reduction in size and thickness of the interposer substrate, as well as extending the lifespan of solder joints.
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Inventors:
FUJISAWA YOSHITOMO (JP)
Application Number:
PCT/JP2011/000742
Publication Date:
August 25, 2011
Filing Date:
February 10, 2011
Export Citation:
Assignee:
CANON KK (JP)
FUJISAWA YOSHITOMO (JP)
FUJISAWA YOSHITOMO (JP)
International Classes:
H01L25/10; H01L21/48; H01L23/00; H01L23/498; H05K3/34
Foreign References:
US6750549B1 | 2004-06-15 | |||
US6271109B1 | 2001-08-07 | |||
US20040227236A1 | 2004-11-18 | |||
US6936922B1 | 2005-08-30 | |||
JP3291368B2 | 2002-06-10 | |||
JP2010032321A | 2010-02-12 |
Attorney, Agent or Firm:
ABE, Takuma et al. (30-2 Shimomaruko 3-chome, Ohta-k, Tokyo 01, JP)
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Claims:
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