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Title:
SEMICONDUCTOR DEVICE, STORAGE APPARATUS, AND ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2023/223127
Kind Code:
A1
Abstract:
A semiconductor device having a high storage density is applied in the present invention. This semiconductor device has a first layer and a first insulating material. The first layer has a first oxide semiconductor, first to ninth conductors, and second to fifth insulating materials. The first layer is positioned on the first insulating material, and the first oxide semiconductor is positioned above the first insulating material. The first and sixth conductors are positioned on the top and lateral surfaces of the first oxide semiconductor and on the top surface of the first insulating material, respectively. Further, the second and fourth conductors are positioned on the top surface of the first oxide semiconductor. The second insulating material and the third conductor are positioned between the first conductor and the second conductor, the third insulating material and the fifth conductor are positioned between the second conductor and the fourth conductor, and the fourth insulating material and the seventh conductor are positioned between the fourth conductor and the sixth conductor. The fifth insulating material and the eighth conductor are positioned on the first conductor, in the stated order, in a region that does not overlap the first oxide. Further, the ninth conductor is positioned on the second conductor.

Inventors:
INOUE TATSUNORI (JP)
INOUE HIROKI (JP)
Application Number:
PCT/IB2023/054529
Publication Date:
November 23, 2023
Filing Date:
May 02, 2023
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; G11C11/405; H01L21/8234; H01L27/06; H01L27/088; H01L29/786; H10B41/70; H10B99/00
Domestic Patent References:
WO2021033075A12021-02-25
WO2020234689A12020-11-26
Foreign References:
JP2015213164A2015-11-26
JP2020123612A2020-08-13
JP2015084418A2015-04-30
JP2015181159A2015-10-15
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