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Title:
SEMICONDUCTOR DEVICE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/002317
Kind Code:
A1
Abstract:
This semiconductor device substrate has: a substrate; a buffer layer, which is provided on the substrate, and is formed of a nitride semiconductor; and a device active layer configured from a nitride semiconductor layer provided on the buffer layer. The semiconductor device substrate is characterized in that: the buffer layer contains carbon and iron; the carbon concentration of the upper surface of the buffer layer is higher than the carbon concentration of the lower surface of the buffer layer; and the iron concentration of the upper surface of the buffer layer is lower than the iron concentration of the lower surface of the buffer layer. Consequently, provided is the semiconductor device substrate wherein a leak current in the lateral direction in high-temperature operation is reduced, while suppressing a leak current in the longitudinal direction.

Inventors:
SATO KEN (JP)
SHIKAUCHI HIROSHI (JP)
GOTO HIROKAZU (JP)
SHINOMIYA MASARU (JP)
TSUCHIYA KEITARO (JP)
HAGIMOTO KAZUNORI (JP)
Application Number:
PCT/JP2016/002915
Publication Date:
January 05, 2017
Filing Date:
June 17, 2016
Export Citation:
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Assignee:
SANKEN ELECTRIC CO LTD (JP)
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/205; H01L21/338; H01L21/336; H01L29/207; H01L29/778; H01L29/78; H01L29/812
Foreign References:
US20140239308A12014-08-28
JP2015053328A2015-03-19
JP2014017285A2014-01-30
JP2012033646A2012-02-16
JP2014072430A2014-04-21
JP2010258441A2010-11-11
Attorney, Agent or Firm:
YOSHIMIYA, Mikio et al. (JP)
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