Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM
Document Type and Number:
WIPO Patent Application WO/2021/010428
Kind Code:
A1
Abstract:
Provided is a semiconductor device that is particularly useful as a power device and achieves improvement in crystal defects that are caused by stress concentration in a semiconductor layer that is caused by an insulator film. A semiconductor device that comprises at least a semiconductor layer, a Schottky electrode, and an insulator layer that is provided between the Schottky electrode and a portion of the semiconductor layer. The semiconductor layer includes a crystalline oxide semiconductor, and the insulator layer has a taper angle of no more than 10°.
Inventors:
OKIGAWA MITSURU (JP)
HIGUCHI YASUSHI (JP)
MATSUBARA YUSUKE (JP)
IMAFUJI OSAMU (JP)
SHINOHE TAKASHI (JP)
HIGUCHI YASUSHI (JP)
MATSUBARA YUSUKE (JP)
IMAFUJI OSAMU (JP)
SHINOHE TAKASHI (JP)
Application Number:
PCT/JP2020/027577
Publication Date:
January 21, 2021
Filing Date:
July 15, 2020
Export Citation:
Assignee:
FLOSFIA INC (JP)
International Classes:
H01L29/06; H01L21/329; H01L29/24; H01L29/47; H01L29/872
Domestic Patent References:
| WO2015166608A1 | 2015-11-05 |
Foreign References:
| JP2019057569A | 2019-04-11 | |||
| JP2018060992A | 2018-04-12 | |||
| JP2013258251A | 2013-12-26 |
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