Title:
SEMICONDUCTOR DEVICE USING SILVER NANOPARTICLES AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/005372
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a highly accurate semiconductor device in which the semiconductor is inhibited from being damaged when the semiconductor element and a substrate are bonded, the heat dissipation performance from the semiconductor element to the substrate is high, the bonding between the semiconductor element and the substrate is firm, the electroconductivity from the terminal of the semiconductor element and the electrode of the substrate is high, and the manufacturing efficiency is high; and a method for manufacturing the semiconductor device. The present invention is a semiconductor device provided with a semiconductor element and a substrate, the semiconductor device being characterized in that the terminal of the semiconductor element and the electrode of the substrate face each other, the terminal and the electrode are bonded by one or more bond parts, at least one of the bond parts is a sintered body obtained by sintering silver nanoparticles, and the silver nanoparticles are obtained by thermal decomposition of a mixture containing an amine (A) having an aliphatic hydrocarbon group and an amino group, and a silver compound (B); and a method for manufacturing the semiconductor device.
Inventors:
OKAMOTO KAZUKI (JP)
KODUMA HIROYOSHI (JP)
KODUMA HIROYOSHI (JP)
Application Number:
PCT/JP2014/068270
Publication Date:
January 15, 2015
Filing Date:
July 09, 2014
Export Citation:
Assignee:
DAICEL CORP (JP)
International Classes:
H01L21/60; B22F1/054; B22F9/00; B22F9/30; B82Y30/00; H01B5/00
Foreign References:
| JP2010140928A | 2010-06-24 | |||
| JP2012207049A | 2012-10-25 | |||
| JP2007332259A | 2007-12-27 |
Attorney, Agent or Firm:
GOTO, YUKIHISA (JP)
Yukihisa Goto (JP)
Yukihisa Goto (JP)
Download PDF: