SEMICONDUCTOR DEVICE WITH AIRGAP SPACER FORMATION FROM BACKSIDE OF WAFER

Title:

SEMICONDUCTOR DEVICE WITH AIRGAP SPACER FORMATION FROM BACKSIDE OF WAFER

Document Type and Number:

WIPO Patent Application WO/2023/046566

Kind Code:

A3

Abstract:

A semiconductor structure includes a substrate and a field effect transistor disposed on the substrate. The field effect transistor includes a vertical fin, source and drain regions separated by a gate region, a gate structure disposed over the gate region and a gate airgap spacer at least partially disposed about the gate structure.

Inventors:

XIE RUILONG (US)
FROUGIER JULIEN (US)
CHENG KANGGUO (US)
PARK CHANRO (US)

Application Number:

PCT/EP2022/075620

Publication Date:

May 04, 2023

Filing Date:

September 15, 2022

Export Citation:

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Assignee:

IBM (US)
IBM DEUTSCHLAND (DE)

International Classes:

H01L29/66; H01L29/06; H01L29/49; H01L29/78

Foreign References:

US20200411660A1	2020-12-31
EP3324436A1	2018-05-23
US20200152504A1	2020-05-14
US20210226033A1	2021-07-22
US20150255571A1	2015-09-10

Attorney, Agent or Firm:

VETTER, Svenja (DE)

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