Title:
SEMICONDUCTOR DEVICE WITH III-NITRIDE CHANNEL REGION AND SILICON CARBIDE DRIFT REGION
Document Type and Number:
WIPO Patent Application WO/2017/071635
Kind Code:
A1
Abstract:
Techniques are provided for forming a semiconductor device. In an aspect, a semiconductor device (100) is provided that includes a silicon carbide (SiC) structure (102) and a III-nitride structure (104). The SiC structure includes a drain electrode (106), a substrate layer (108) that is formed on the drain electrode and includes SiC, and a drift layer (110) formed on the substrate layer. The drift layer includes p-well regions (112a, 112b) that allow current to flow through a region (134) between the p-well regions. The III-nitride structure includes a set of III-nitride semiconductor layers formed on the SiC structure, a passivation layer (1608) formed on the set of III-nitride semiconductor layers, a source electrode (126) electrically coupled to the p-well regions, and gate electrodes (1606a, 1606b) electrically isolated from the set of III-nitride semiconductor layers. In an aspect, the SiC structure includes a transition layer (111) that includes connecting regions (114a, 114b). In another aspect, the III-nitride structure includes connection electrodes (130a, 130b) electrically coupled to the connecting regions.
Inventors:
CHEN JING (CN)
WEI JIN (CN)
WEI JIN (CN)
Application Number:
PCT/CN2016/103726
Publication Date:
May 04, 2017
Filing Date:
October 28, 2016
Export Citation:
Assignee:
UNIV HONG KONG SCIENCE & TECH (CN)
International Classes:
H01L29/267; H01L21/8232; H01L29/772
Foreign References:
| US20060219997A1 | 2006-10-05 | |||
| US20080169474A1 | 2008-07-17 | |||
| US20140299887A1 | 2014-10-09 | |||
| US20100084687A1 | 2010-04-08 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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