Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/1984/004628
Kind Code:
A1
Abstract:
A semiconductor device is designed to solve the problem of the instability of the surface state of a semiconductor substrate below an oxide layer, based on the generation of a positive charge. According to the invention, an arsenic diffusion-blocking layer (11) is formed between an oxide layer (1) which is formed over one main surface of a semiconductor substrate and an arsenic-containing layer (2) which is formed over the oxide layer (1), and into which hydrogen is diffused in order to block the diffusion of the arsenic contained in the arsenic-containing layer (2) into the oxide layer (1) when annealing is effected, thereby preventing the generation of a positive charge. The invention is applicable to, for example, the field-insulating layer of a complementary MOS integrated circuit or the silicon gate portion of a MOS transistor.
Inventors:
HAYASHI HISAO (JP)
Application Number:
PCT/JP1984/000243
Publication Date:
November 22, 1984
Filing Date:
May 16, 1984
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/314; H01L21/316; H01L21/762; H01L27/08; H01L29/06; H01L29/78; (IPC1-7): H01L21/314; H01L27/08; H01L29/78
Foreign References:
| JPS4964382A | 1974-06-21 | |||
| US3700507A | 1972-10-24 | |||
| US3660735A | 1972-05-02 |
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