Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/1992/012498
Kind Code:
A1
Abstract:
A semiconductor device capable of realizing a neuro-computer chip of high integration degree and low power consumption. The device consumes a very small amount of electric power and the combinations of synapes can be realized, using a small number of elements. A first MOS type transistor includes a first gate electrode floating in potential and provided in a region isolating a source region from a drain region via a first insulation film, and plural second gate electrodes capacitively coupled to the first gate electrode via a second insulation film, one of which is in connection with a source electrode. The gate or drain electrode of the MOS type transistor is in connection with a first wiring for transferring signals of high or low level in potential.
Inventors:
SHIBATA TADASHI (JP)
OHMI TADAHIRO (JP)
OHMI TADAHIRO (JP)
Application Number:
PCT/JP1992/000014
Publication Date:
July 23, 1992
Filing Date:
January 10, 1992
Export Citation:
Assignee:
SHIBATA TADASHI (JP)
International Classes:
G06G7/60; G06F15/18; G06N3/063; G06N99/00; H01L21/822; H01L21/8247; H01L27/04; H01L27/10; H01L27/115; H01L29/788; H01L29/792; H03K17/687; H03K17/00; (IPC1-7): G06G7/60
Foreign References:
| JPH0274053A | 1990-03-14 |
Other References:
See also references of EP 0566739A4
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