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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/137167
Kind Code:
A1
Abstract:
Provided is a semiconductor device capable of suppressing an electric current flowing between a first insulated gate semiconductor element and a second insulated gate semiconductor element and being manufactured in a general manufacturing process with high manufacturing efficiency. The semiconductor device is provided with a semiconductor substrate in which the first insulated gate semiconductor element and the second insulated gate semiconductor element are formed.  A high-concentration region is formed in a region facing a first surface of the semiconductor substrate between a body region of the first insulated gate semiconductor element and a body region of the second insulated gate semiconductor element.  The first conductivity-type impurity concentration of high-concentration region is higher than those of a drift region of the first insulated gate semiconductor element and a drift region of the second insulated gate semiconductor element.

Inventors:
BAMBA KOSUKE (JP)
Application Number:
PCT/JP2009/059886
Publication Date:
December 02, 2010
Filing Date:
May 29, 2009
Export Citation:
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Assignee:
TOYOTA MOTOR CO LTD (JP)
BAMBA KOSUKE (JP)
International Classes:
H01L21/76; H01L21/761; H01L27/04; H01L27/088; H01L29/739; H01L29/78
Domestic Patent References:
WO1999061512A11999-12-02
Foreign References:
JPH10326897A1998-12-08
JPH0637262A1994-02-10
JP2008205500A2008-09-04
JP2004221162A2004-08-05
JP2006100690A2006-04-13
JPH08188541A1996-07-23
JP2001014556A2001-01-19
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Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
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