Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/033599
Kind Code:
A1
Abstract:
A semiconductor device comprises: a substrate; first, second, … n-th (n is a natural number of 2 or more) dielectric layers stacked in sequence on one surface of the substrate; a k-th ground metal provided between the k-th (k is a natural number satisfying the condition 1 ≤ k < n) dielectric layer and the (k+1)-th dielectric layer, having a first hole formed therethrough, and having a first DC voltage level; a k-th ground patch provided inside the first hole; a (k+m)-th ground metal provided between the (k+m)-th (m is a natural number satisfying the condition 1 ≤ m < n-k) dielectric layer and the (k+m+1)-th dielectric layer, having at least one second hole formed therethrough, and having a second DC voltage level; a (k+m)-th ground patch provided inside the second hole; a first via for connecting the k-th ground metal and the (k+m)-th ground patch; and a second via for connecting the (k+m)-th ground metal and the k-th ground patch.
More Like This:
| JPH0760962 | [Title of Invention] Planar Dielectric Filter |
| JP2005033048 | CAVITY RESONATOR |
| JPH09205307 | DIRECTIONAL COUPLER AND MANUFACTURE THEREOF |
Inventors:
ONO NAOKO
Application Number:
PCT/JP2009/004780
Publication Date:
March 24, 2011
Filing Date:
September 21, 2009
Export Citation:
Assignee:
TOSHIBA KK (JP)
ONO NAOKO
ONO NAOKO
International Classes:
H01P11/00; H01L21/768; H01L21/822; H01L23/522; H01L27/04
Foreign References:
| JPH10189593A | 1998-07-21 | |||
| JPH08274167A | 1996-10-18 | |||
| JPH07297188A | 1995-11-10 | |||
| JPH038360A | 1991-01-16 | |||
| JPH1117003A | 1999-01-22 |
Attorney, Agent or Firm:
SAGOI, MASAYUKI (JP)
Masayuki Sunai (JP)
Masayuki Sunai (JP)
Download PDF: