Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/093472
Kind Code:
A1
Abstract:
A protective diode (71) comprises a p-anode layer (21) and an n-cathode layer (22) which are alternately formed on a polysilicon layer, and comprises a pn-junction (74) which adopts a reverse blocking state when forward biased and every other one of which is short-circuited by a metal film (53). By connecting the protective diode (71) to a power semiconductor element (IGBT (72)), high breakdown resistance and reduced chip area can both be achieved at the same time, elevation of withstand voltage is suppressed even if a clamping voltage is repeatedly applied, and furthermore breakdown due to a negative surge voltage input to a gate terminal (G) can be prevented.

Inventors:
HARADA YUICHI (JP)
NAITO TATSUYA (JP)
TOYODA YOSHIAKI (JP)
Application Number:
PCT/JP2011/051830
Publication Date:
August 04, 2011
Filing Date:
January 28, 2011
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
FUJI ELECTRIC SYSTEMS CO LTD (JP)
HARADA YUICHI (JP)
NAITO TATSUYA (JP)
TOYODA YOSHIAKI (JP)
International Classes:
H01L27/04; H01L21/822; H01L27/088; H01L29/739; H01L29/78; H01L29/786; H01L29/866
Foreign References:
JPH11251594A1999-09-17
JPH06163911A1994-06-10
JPH0750304A1995-02-21
JP2002538598A2002-11-12
JP2006019528A2006-01-19
JPH11284175A1999-10-15
JPH07202191A1995-08-04
JP2002141507A2002-05-17
JPS57141962A1982-09-02
JP2000174272A2000-06-23
US6770949B12004-08-03
JPH07130898A1995-05-19
JPH0472667A1992-03-06
JP2000077537A2000-03-14
JPH01259570A1989-10-17
JP2004327976A2004-11-18
JPH08316480A1996-11-29
Attorney, Agent or Firm:
SAKAI, AKINORI (JP)
Akinori Sakai (JP)
Download PDF:
View/Download PDF      PDF Help
Claims:



 
Previous Patent: METHOD FOR PRODUCING NEOPONKORANOL OR ANALOG THEREOF

Next Patent: SEMICONDUCTOR DEVICE