Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/017878
Kind Code:
A1
Abstract:
Provided is a semiconductor device having: a transistor section which is provided with a plurality of transistor units that are adjacent to each other; and a diode which is adjacent to the transistor section. Each of the transistor units is provided with a first conductivity type drift region to be a drain region, a second conductivity type well region formed on the drift region, a gate electrode formed inside of a first trench, and a first conductivity type source region formed on the well region by being in contact with the first trench. The source region provided in the transistor unit adjacent to the diode is formed only on the side of other adjacent transistor unit by having the first trench as a boundary. Alternatively, in the source region provided in the transistor unit adjacent to the diode, the width of the source region formed on the diode side is smaller than that of the source region formed on the side of other adjacent transistor unit.
Inventors:
SUZUKI TATSUHIRO
HAYASHI TETSUYA
YAMAGAMI SHIGEHARU
HAYASHI TETSUYA
YAMAGAMI SHIGEHARU
Application Number:
PCT/JP2011/067034
Publication Date:
February 09, 2012
Filing Date:
July 27, 2011
Export Citation:
Assignee:
NISSAN MOTOR (JP)
SUZUKI TATSUHIRO
HAYASHI TETSUYA
YAMAGAMI SHIGEHARU
SUZUKI TATSUHIRO
HAYASHI TETSUYA
YAMAGAMI SHIGEHARU
International Classes:
H01L27/04; H01L21/8234; H01L27/06; H01L27/088; H01L29/12; H01L29/78
Foreign References:
| JP2009253139A | 2009-10-29 | |||
| JP2002203966A | 2002-07-19 | |||
| JPH11243196A | 1999-09-07 | |||
| JP2006179664A | 2006-07-06 |
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)
Hidekazu Miyoshi (JP)
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Claims: