Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/096208
Kind Code:
A1
Abstract:
This semiconductor device (100A) comprises: an oxide semiconductor layer (4) having a first contact region (4a), second contact region (4b), and a channel (4c) positioned between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All of the side surfaces of the oxide semiconductor layer (4) are above a gate electrode (2), and the width of the source electrode (5) is greater than the width of the oxide semiconductor layer (4). The width of the drain electrode (6) is greater than the width of the oxide semiconductor layer (4).
Inventors:
KAWASHIMA SHINGO
NAKATA YUKINOBU
MURAI ATSUHITO
TANAKA SHINYA
NAKATA YUKINOBU
MURAI ATSUHITO
TANAKA SHINYA
Application Number:
PCT/JP2012/050078
Publication Date:
July 19, 2012
Filing Date:
January 05, 2012
Export Citation:
Assignee:
SHARP KK (JP)
KAWASHIMA SHINGO
NAKATA YUKINOBU
MURAI ATSUHITO
TANAKA SHINYA
KAWASHIMA SHINGO
NAKATA YUKINOBU
MURAI ATSUHITO
TANAKA SHINYA
International Classes:
H01L29/786
Domestic Patent References:
| WO2007086368A1 | 2007-08-02 |
Foreign References:
| JP2010211086A | 2010-09-24 | |||
| JP2007115902A | 2007-05-10 | |||
| JP2008192715A | 2008-08-21 | |||
| JP2005223254A | 2005-08-18 | |||
| JP2001242490A | 2001-09-07 |
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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Claims: