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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/096208
Kind Code:
A1
Abstract:
This semiconductor device (100A) comprises: an oxide semiconductor layer (4) having a first contact region (4a), second contact region (4b), and a channel (4c) positioned between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All of the side surfaces of the oxide semiconductor layer (4) are above a gate electrode (2), and the width of the source electrode (5) is greater than the width of the oxide semiconductor layer (4). The width of the drain electrode (6) is greater than the width of the oxide semiconductor layer (4).

Inventors:
KAWASHIMA Shingo (())
川島 慎吾 (())
NAKATA Yukinobu (())
中田 幸伸 (())
Application Number:
JP2012/050078
Publication Date:
July 19, 2012
Filing Date:
January 05, 2012
Export Citation:
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Assignee:
SHARP KABUSHIKI KAISHA (22-22, Nagaike-cho Abeno-ku, Osaka-sh, Osaka 22, 〒5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町22番22号 Osaka, 〒5458522, JP)
KAWASHIMA Shingo (())
川島 慎吾 (())
NAKATA Yukinobu (())
International Classes:
H01L29/786
Domestic Patent References:
WO2007086368A12007-08-02
Foreign References:
JP2010211086A2010-09-24
JP2007115902A2007-05-10
JP2008192715A2008-08-21
JP2005223254A2005-08-18
JP2001242490A2001-09-07
Attorney, Agent or Firm:
OKUDA Seiji (OKUDA & ASSOCIATES, 10th Floor Osaka Securities Exchange Bldg., 8-16, Kitahama 1-chome, Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
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Claims: