Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/102196
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device that can suppress device size shrinkage, reduction in series resistance, and leak current.
The present invention ventures to insert into the device structure a layer that generates a difference in electric potential that was unnecessary conventionally for device operation. Even when a semiconductor with a small band gap is exposed on a mesa side surface, this difference in electric potential provides a function that can suppress the amount of drop in electric potential in that part and reduce leak current that is inconvenient for device operation. As a result, obtaining these effects is common to heterostructure bipolar transistors, photodiodes, electroabsorption optical modulators, and other devices. Furthermore, in photodiodes, leak current is relaxed; therefore the device size can be reduced. Not only is operating speed improved by reducing series resistance, but also the advantage of being able to dispose devices in a high density array form arises.
Inventors:
ISHIBASHI, Tadao (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
石橋 忠夫 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ ＮＴＴエレクトロニクス株式会社内 Kanagawa, 〒2210031, JP)
ANDO, Seigo (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
安藤 精後 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ ＮＴＴエレクトロニクス株式会社内 Kanagawa, 〒2210031, JP)
MURAMOTO, Yoshifumi (9-11 Midori-cho 3-Chome, Musashino-sh, Tokyo 85, 〒1808585, JP)
石橋 忠夫 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ ＮＴＴエレクトロニクス株式会社内 Kanagawa, 〒2210031, JP)
ANDO, Seigo (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
安藤 精後 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ ＮＴＴエレクトロニクス株式会社内 Kanagawa, 〒2210031, JP)
MURAMOTO, Yoshifumi (9-11 Midori-cho 3-Chome, Musashino-sh, Tokyo 85, 〒1808585, JP)
Application Number:
JP2012/051178
Publication Date:
August 02, 2012
Filing Date:
January 20, 2012
Export Citation:
Assignee:
NTT ELECTRONICS CORPORATION (1-32, Shin-Urashimacho 1-chome Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
ＮＴＴエレクトロニクス株式会社 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ Kanagawa, 〒2210031, JP)
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (3-1 Otemachi 2-chome, Chiyoda-ku Tokyo, 16, 〒1008116, JP)
日本電信電話株式会社 (〒16 東京都千代田区大手町二丁目３番１号 Tokyo, 〒1008116, JP)
ISHIBASHI, Tadao (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
石橋 忠夫 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ ＮＴＴエレクトロニクス株式会社内 Kanagawa, 〒2210031, JP)
ANDO, Seigo (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
ＮＴＴエレクトロニクス株式会社 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ Kanagawa, 〒2210031, JP)
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (3-1 Otemachi 2-chome, Chiyoda-ku Tokyo, 16, 〒1008116, JP)
日本電信電話株式会社 (〒16 東京都千代田区大手町二丁目３番１号 Tokyo, 〒1008116, JP)
ISHIBASHI, Tadao (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
石橋 忠夫 (〒31 神奈川県横浜市神奈川区新浦島町一丁目１番地３２ ＮＴＴエレクトロニクス株式会社内 Kanagawa, 〒2210031, JP)
ANDO, Seigo (1-32 Shin-Urashimacho 1-chome, Kanagawa-ku, Yokohama-sh, Kanagawa 31, 〒2210031, JP)
International Classes:
H01L21/331; G02F1/017; H01L29/737; H01L31/10
Attorney, Agent or Firm:
OKADA, Kenji et al. (I'LL, Setoguchi Bldg. 3rd fl. 12-5, Nishi-Shimbashi 2-chome, Minato-k, Tokyo 03, 〒1050003, JP)
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Claims: