Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/005372
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a first heterojunction body in which a first channel layer (103) and a first barrier layer (104) are joined with each other; a second heterojunction body which is formed on the first heterojunction body and in which a second channel layer (105) and a second barrier layer (106) are joined with each other; a gate electrode (111) that forms a Schottky contact with the second barrier layer; and a source electrode (109) and a drain electrode (110) that form an ohmic contact with the first heterojunction body and the second heterojunction body. The first channel layer and/or the second channel layer has a thickness that prevents decrease of the electron concentration of 2DEG which is formed in the channel layer.
Inventors:
MURATA TOMOHIRO
SHIBATA DAISUKE
UEDA TETSUZO
SHIBATA DAISUKE
UEDA TETSUZO
Application Number:
PCT/JP2012/003732
Publication Date:
January 10, 2013
Filing Date:
June 07, 2012
Export Citation:
Assignee:
PANASONIC CORP (JP)
MURATA TOMOHIRO
SHIBATA DAISUKE
UEDA TETSUZO
MURATA TOMOHIRO
SHIBATA DAISUKE
UEDA TETSUZO
International Classes:
H01L21/338; H01L21/205; H01L21/28; H01L21/336; H01L21/337; H01L27/098; H01L29/41; H01L29/47; H01L29/778; H01L29/78; H01L29/808; H01L29/812; H01L29/872
Foreign References:
| JP2010135640A | 2010-06-17 | |||
| JPH03132043A | 1991-06-05 | |||
| JP2007134607A | 2007-05-31 | |||
| JP2002270618A | 2002-09-20 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
Download PDF:
Claims: