Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/132582
Kind Code:
A1
Abstract:
Provided is a semiconductor device in which the change in on-resistance in relation to temperature can be reduced. A semiconductor device (100) provided with: a semiconductor substrate (1) having a first conductivity type; a drift layer (2) formed on the semiconductor substrate (1), the drift layer (2) having the first conductivity type; a first well region (3) formed on the surface of the drift layer (2), the first well region (3) having a second conductivity type; a second well region (4) formed on the surface of the drift layer (2), the second well region (4) having the second conductivity type; and gate structures (7, 8, 9) formed on the surface of the drift layer (2), the gate structures (7, 8, 9) forming a channel in the first well region (3) and the second well region (4). The channel resistance of the channel formed in the first well region (3) is a temperature characteristic that decreases with rising temperature. The channel resistance of the channel formed in the second well region (4) is a temperature characteristic that increases with rising temperature.
Inventors:
FURUHASHI MASAYUKI (JP)
OKABE HIROAKI (JP)
WATANABE TOMOKATSU (JP)
IMAIZUMI MASAYUKI (JP)
OKABE HIROAKI (JP)
WATANABE TOMOKATSU (JP)
IMAIZUMI MASAYUKI (JP)
Application Number:
PCT/JP2014/000746
Publication Date:
September 04, 2014
Filing Date:
February 14, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/8234; H01L27/088
Foreign References:
| JP2007180116A | 2007-07-12 | |||
| JP2005150321A | 2005-06-09 |
Attorney, Agent or Firm:
TAKAHASHI, Shogo et al. (JP)
Shogo Takahashi (JP)
Shogo Takahashi (JP)
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