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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/136344
Kind Code:
A1
Abstract:
The problem addressed by the present invention is to provide a high-breakdown-voltage semiconductor device of high reliability. As means for solving the problem: in a case of being a Schottky diode, concentration of impurities in a first JTE region is set to be greater than or equal to 4.4 × 1017 cm-3 and less than or equal to 6 × 1017 cm-3, and concentration of impurities in a second JTE region is set to be less than or equal to 2 × 1017 cm-3; and in a case of being a junction barrier Schottky diode, concentration of impurities in the first JTE region is set to be greater than or equal to 6 × 1017 cm-3 and less than or equal to 8 × 1017 cm-3, and concentration of impurities in the second JTE region is set to be less than or equal to 2 × 1017 cm-3.

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Inventors:
MOCHIZUKI KAZUHIRO (JP)
ONOSE HIDEKATSU (JP)
KAMESHIRO NORIFUMI (JP)
YOKOYAMA NATSUKI (JP)
Application Number:
PCT/JP2013/083101
Publication Date:
September 12, 2014
Filing Date:
December 10, 2013
Export Citation:
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Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/47; H01L29/06; H01L29/872
Domestic Patent References:
WO2012049872A12012-04-19
Foreign References:
JP2011165856A2011-08-25
JP2011514674A2011-05-06
JP2000516767A2000-12-12
JP2008103529A2008-05-01
JP2012190983A2012-10-04
JP2006100593A2006-04-13
JPH07193018A1995-07-28
Attorney, Agent or Firm:
TSUTSUI, YAMATO (JP)
Tsutsui Daiwa (JP)
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