SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2014/192444

A1

A semiconductor substrate (20) has an element section (20E) and a termination section (20T) positioned outside of the element section (20E). A first electrode layer (40) is disposed on a first surface (P1) of the semiconductor substrate (20). A second electrode layer (50) is disposed on the element section (20E) on a second surface (P2) of the semiconductor substrate (20). An interlayer insulating film (60) is disposed on the second surface (P2) of the semiconductor substrate (20). The interlayer insulating film (60) comprises: an element insulating section that provides insulation between part of the element section (20E) of the semiconductor substrate (20) and the second electrode layer (50); and a termination insulating section that covers the termination section (20T) of the semiconductor substrate (20). The termination insulating section includes a high-dielectric-constant film (62) having a higher dielectric constant than the dielectric constant of the element insulating section.

JPH10294294	FORMATION OF METALLIC WIRING OF SEMICONDUCTOR DEVICE
JPS60146354	[Title of the device] A semiconductor device with which the high frequency characteristic was adjusted
JPS5214382	SEMICONDUCTOR DEVICE

MASUDA TAKEYOSHI (JP)
YAMADA SHUNSUKE (JP)

PCT/JP2014/060583

December 04, 2014

April 14, 2014

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SUMITOMO ELECTRIC INDUSTRIES (JP)

H01L29/78; H01L21/28; H01L21/283; H01L21/336; H01L21/337; H01L21/338; H01L29/06; H01L29/12; H01L29/16; H01L29/161; H01L29/20; H01L29/41; H01L29/423; H01L29/47; H01L29/49; H01L29/808; H01L29/812; H01L29/872

JP2012004312A	2012-01-05
JPH11330496A	1999-11-30
US20100140689A1	2010-06-10
JP2009081385A	2009-04-16

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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