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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/037086
Kind Code:
A1
Abstract:
This invention uses a vertical transistor, namely a surrounding gate transistor (SGT), to provide a semiconductor device that constitutes part of a latch circuit and has a small surface area. In said latch circuit, which comprises a plurality of MOS transistors laid out on a substrate, each of said MOS transistors is formed on a flat silicon layer formed on top of the substrate, wherein a drain, a gate, and a source are arranged vertically, the gate is structured so as to surround a silicon pillar, the flat silicon layer comprises a first activated region that has a first conductivity type and a second activated region that has a second conductivity type, and said regions are connected to each other via a silicon layer formed at the surface of the flat silicon layer, thereby providing a semiconductor device that constitutes part of a latch circuit and has a small surface area.

Inventors:
MASUOKA Fujio (4th Floor Kudanzaka Park Building, 15-2, Kudankita 1-chome, Chiyoda-k, Tokyo 73, 〒1020073, JP)
ASANO Masamichi (4th Floor Kudanzaka Park Building, 15-2, Kudankita 1-chome, Chiyoda-k, Tokyo 73, 〒1020073, JP)
Application Number:
JP2013/074572
Publication Date:
March 19, 2015
Filing Date:
September 11, 2013
Export Citation:
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Assignee:
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (111 North Bridge Road, #16-04 Peninsula Plaza, 8, 179098, SG)
MASUOKA Fujio (4th Floor Kudanzaka Park Building, 15-2, Kudankita 1-chome, Chiyoda-k, Tokyo 73, 〒1020073, JP)
ASANO Masamichi (4th Floor Kudanzaka Park Building, 15-2, Kudankita 1-chome, Chiyoda-k, Tokyo 73, 〒1020073, JP)
International Classes:
H01L21/8238; H01L21/336; H01L27/092; H01L29/78; H03K3/356
Foreign References:
JP2010272874A2010-12-02
JPH0349409A1991-03-04
JPH01183211A1989-07-21
JP2007267256A2007-10-11
JP2011108702A2011-06-02
JP2008205168A2008-09-04
Attorney, Agent or Firm:
TSUJII Koichi et al. (NAKAMURA & PARTNERS, Shin-Tokyo Bldg. 3-1, Marunouchi 3-chome, Chiyoda-k, Tokyo 55, 〒1008355, JP)
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