Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/040662
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor device using a wide band gap semiconductor, which is provided with: a first MOS transistor (SM), of a first conductivity type, for which a first main electrode (D) is connected to a first potential, and a second main electrode (S) is connected to a second potential; and a second MOS transistor (LM), of a second conductivity type, for which the first main electrode (D) is connected to a control electrode (G) of the first MOS transistor, and the second main electrode (S) is connected to the second potential. The control electrode of the first MOS transistor and the control electrode (G) of the second MOS transistor are connected so as to be in common, and the first and second MOS transistors are formed upon a shared wide band gap semiconductor substrate. For the first MOS transistor, main current flows in a vertical direction with respect to the main surface of the wide band gap semiconductor substrate, and for the second MOS transistor, the main current flows in a horizontal direction with respect to the main surface of the wide band gap semiconductor substrate.
Inventors:
KAGUCHI NAOTO (JP)
SUEKAWA EISUKE (JP)
IKEGAMI MASAAKI (JP)
SUEKAWA EISUKE (JP)
IKEGAMI MASAAKI (JP)
Application Number:
PCT/JP2013/074964
Publication Date:
March 26, 2015
Filing Date:
September 17, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L27/06; H01L21/336; H01L21/822; H01L27/04; H01L29/12; H01L29/78
Foreign References:
| JPH06244413A | 1994-09-02 | |||
| JP2000223705A | 2000-08-11 | |||
| JP2007299862A | 2007-11-15 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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