Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/076020
Kind Code:
A1
Abstract:
A MOSFET (1) which includes a main surface and comprises: SiC layers (11) on which a plurality of contact regions (15) are formed; and a plurality of source electrodes which are formed on and in contact with the contact regions (15). In a plan view of the main surface of the MOSFET (1), a plurality of cells (CL), which include the contact regions (15) and the source electrodes and have a hexagonal outer peripheral shape including a long dimension, are formed adjacent to one another. The contact resistance of the contact regions (15) and the source electrodes of the MOSFET (1) can be further decreased, and therefore the electrical properties of the present invention can be further improved.
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Inventors:
HIRAKATA NORIYUKI (JP)
Application Number:
PCT/JP2014/076031
Publication Date:
May 28, 2015
Filing Date:
September 30, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L29/12
Domestic Patent References:
| WO2009139140A1 | 2009-11-19 |
Foreign References:
| JP2005183943A | 2005-07-07 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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