Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/093052
Kind Code:
A1
Abstract:
This semiconductor device is provided with a lateral transistor that comprises: a semiconductor substrate (1) having a drift layer (2); a first impurity layer (4) within the drift layer; a channel layer (6) within the drift layer; a second impurity layer (7) within the channel layer; an insulating film for isolation (3) on the drift layer between the channel layer and the first impurity layer; a gate insulating film (10) that is on a channel region between the second impurity layer and the drift layer and is in contact with the insulating film for isolation; a gate electrode (11) on the gate insulating film and the insulating film for isolation; a first electrode (12) that is connected to the first impurity layer; a second electrode (13) that is connected to the second impurity layer and the channel layer; and a field plate (14) that is on the insulating film for isolation between the gate electrode and the first electrode and is connected to the first electrode. The field plate is larger than the gate electrode in the size in the current direction.
Inventors:
KAMEOKA HIROSHI (JP)
TAKAHASHI SHIGEKI (JP)
YAMADA AKIRA (JP)
KASAHARA ATSUSHI (JP)
TAKAHASHI SHIGEKI (JP)
YAMADA AKIRA (JP)
KASAHARA ATSUSHI (JP)
Application Number:
PCT/JP2014/006295
Publication Date:
June 25, 2015
Filing Date:
December 17, 2014
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/786; H01L21/336; H01L27/08; H01L29/06
Foreign References:
| JPH11266018A | 1999-09-28 | |||
| JPH1140818A | 1999-02-12 | |||
| JP2008153495A | 2008-07-03 |
Attorney, Agent or Firm:
KIN, Junhi (JP)
Gold Junki (JP)
Gold Junki (JP)
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